Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Ji Hoon Choi; Edwige Bano; Anne Henry; Giovanni Attolini; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.858.1001

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Abstract:

The until-now demonstrated SiC-Nanowire Field Effect Transistors (NWFETs) have exhibited poor performance due to the high residual doping of the NWs as well as the bad interface with the gate dielectrics. Top-down NWs have been used for the SiC NWFETs fabrication on the basis of low-doped 3C-SiC material and eliminating, thus, the first reason. The transistors with top-down grown NWs exhibited three orders of magnitude higher current and transconductance values with respect to SiC NWFETs with bottom-up grown NWs. Nevertheless, it was not possible to switch-off the transistors showing the importance of interface with the gate dielectrics.