Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors

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Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. High sensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance were studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

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Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

997-1000

Citation:

D. Puglisi et al., "Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors", Materials Science Forum, Vol. 858, pp. 997-1000, 2016

Online since:

May 2016

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$38.00

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