Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors

Donatella Puglisi; Jens Eriksson; Mike Andersson; Joni Huotari; Manuel Bastuck; Christian Bur; Jyrki Lappalainen; Andreas Schuetze; Anita Lloyd Spetz

doi:10.4028/www.scientific.net/MSF.858.997

Paper Titles

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
p.978

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications
p.982

High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
p.986

NO_x Sensing with SiC Field Effect Transistors
p.993

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors
p.997

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs
p.1001

DNA Detection Using SiC Nanowire Based Transistor
p.1006

SiC for Biomedical Applications
p.1010

Ni₂Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
p.1015

HomeMaterials Science ForumMaterials Science Forum Vol. 858Exploring the Gas Sensing Performance of Catalytic...

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors

Abstract:

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C₆H₆) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. High sensitivity to 10 ppb C₆H₆ was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance were studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.