Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems

Vipindas Pala; Edward van Brunt; Brett Hull; Scott Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.858.970

Paper Titles

4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates
p.954

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
p.958

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm² and High Avalanche Withstanding Capability
p.962

Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness
p.966

Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
p.970

3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation
p.974

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
p.978

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications
p.982

High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination
p.986

HomeMaterials Science ForumMaterials Science Forum Vol. 858Silicon Carbide MOSFETs for Medium Voltage...

Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems

Abstract:

Due to their low switching energies, knee-less forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage topologies. This paper demonstrates how SiC MOSFETs can be effectively combined in series and parallel to maximize the system power density and performance.