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HomeMaterials Science ForumMaterials Science Forum Vol. 879Deep Ultraviolet Photodetector Based on...

Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film

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Abstract:

Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10^-7 A/W/cm² with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis.

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THERMEC 2016

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Periodical:

Materials Science Forum (Volume 879)

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1117-1122

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https://doi.org/10.4028/www.scientific.net/MSF.879.1117

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Online since:

November 2016

Authors:

Yu Bo Li*, Jian Wei Zhong, Li Ming Zhou, Chao Lun Sun, Xiao Wang, Hang Sheng Yang, William Milne

Keywords:

Cubic Boron Nitride Film, Solar-Blind UV Detection, Sulphur Doping, Wide Bandgap

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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