High Intensity Broad Spectrum LEDs in the Near Infrared Range

Abstract:

IR LEDs are widely used in the near-infrared (NIR) spectroscopy, especially in hand-held devices for the detection and measurement of organic materials, allowing faster and cheaper examinations. The -OH, -NH and -CH functional groups found in organic substances can frequently be detected by spectroscopy through absorbance measurement at the resonance wavelength of valence-bond vibrations. The measured wavelengths are 4-2.5 μm, while signal to noise ratio of photon detectors is low due to thermal noise at room temperature. The 1st-3rd harmonic absorption bands are located in the range of the NIR, where smaller signals can be measured effectively in practice. The LEDs have tunable narrow wavelength range therefore they are suitable for such measurements as radiation sources. Further advantages of LEDs compared to incandescent lamps are small dimensions, high efficiency, and low power consumption. In order to tune the emission wavelength of the LED, the composition of the semiconductor light-emitting layer has to be properly set. The change in chemical composition will generally affect the lattice constant too. The crystal defects caused by lattice-mismatch often reduce the efficiency. The emission wavelength is tunable in the quaternary GaInAsP/InP material system meanwhile the lattice-constant remains unchanged. Absorption band of the organic materials is generally broader than the emission spectrum of the LED, therefore a broader emitter is preferred. To achieve this, a number of solutions are known. One of these is to use multiple layers with different composition, where the primary light comes from the active layer at the p-n junction of the diode, then excites the second smaller band gap layer producing longer wavelength secondary light by photoluminescence. The transmitted part of the primary light, together with the secondary light, results in a broader spectrum. This method is not yet implemented in this material system, so my work is focused mainly on this approach.

• Periodical: Materials Science Forum (Volume 885)
• Pages: 141-146
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.885.141
• Online since: February 2017
• Authors: József Nádas*, Vilmos Rakovics
• Keywords: GaInAsP/InP LED, Luminescence LED, NIR LED

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