Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging

Koji Ashida; Toru Aiso; Manabu Okamoto; Hirokazu Seki; Makoto Kitabatake; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.897.193

Paper Titles

Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)
p.177

4H-SiC Defects Evolution by Thermal Processes
p.181

Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation
p.185

Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
p.189

Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging
p.193

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM
p.197

On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC
p.201

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
p.205

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
p.209

HomeMaterials Science ForumMaterials Science Forum Vol. 897Low Energy Electron Channeling Contrast Imaging...

Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging

Abstract:

Low energy electron channeling contrast imaging (LE-ECCI) by scanning electron microscopy (SEM) was adopted to evaluate both the direction and length of the topmost hexagonal stacking sequence of the Si–C bilayers on 4H-SiC (0001). LE-ECCI revealed the change in the dangling bond configuration at step edges depending on SiC thermal etching rate, which was difficult to be detected by optical microscope (OM) and even by atomic force microscopy (AFM). Furthermore, LE-ECCI was applied to evaluate the atomic structure of polytype inclusions in commercially available 3-inch diameter 4^o off-axis 4H-SiC (0001) epitaxial wafer. The validity of LE-ECCI was discussed by comparing the one with two kinds of widely used wafer inspection methods: confocal OM with differential interference contrast (CDIC-OM) and photoluminescence (PL) imaging.