On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC

Jonas Weber; Heiko B. Weber; M. Krieger

doi:10.4028/www.scientific.net/MSF.897.201

Paper Titles

Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation
p.185

Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
p.189

Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging
p.193

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM
p.197

On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC
p.201

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
p.205

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
p.209

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
p.214

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
p.218

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On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC

Abstract:

We have performed capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements on Schottky contacts fabricated on triangular defects in 4H-SiC epitaxial layers. These measurements are a case study on the effect of a specific extended defect on the DLTS spectrum in order to contribute to the physical understanding of curious features occasionally observed in DLTS spectra. Our measurements reveal an inversion of the DLTS signal depending on applied voltages and filling pulse lengths, and a step in the C-V characteristic of the Schottky diode. We present a model that qualitatively describes the experimentally obtained data. In this model, we assume that stacking faults within a triangular defect form quantum wells, which can capture electrons from other defects during the DLTS measurement leading to the inversion of the DLTS spectrum. Moreover, by calculating the differential capacitance using a self-consistent Schrödinger-Poisson-Solver, the step in the C-V measurements is reproduced by our model.