Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress

Yohei Iwahashi; Masaki Miyazato; Masaaki Miyajima; Yoshiyuki Yonezawa; Tomohisa Kato; Hirokazu Fujiwara; Kimimori Hamada; Akihiro Otsuki; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.897.218

Paper Titles

On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC
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SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
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Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
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Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
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Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
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Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence
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Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
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Creation and Functionalization of Defects in SiC by Proton Beam Writing
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Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Extension of Stacking Faults in 4H-SiC pn Diodes...

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress

Abstract:

We investigated the expansion of stacking faults (SFs) under a high current pulse stress in detail. In situ observations showed bar-shaped SFs and two types of triangle SFs with different nucleation sites. The calculated partial dislocation velocity of the bar-shaped SFs was four times faster than that of the triangle SFs. The temperature dependence of the partial dislocation velocity was used to estimate activation energies of 0.23±0.02 eV for bar-shaped SFs and 0.27±0.05 eV for triangle SFs. We also compared the electrical characteristics before and after the stress. The forward voltage drop slightly increased by 0.05 V, and the leakage current did not increase.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

218-221

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.218

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Online since:

May 2017

Authors:

Yohei Iwahashi*, Masaki Miyazato, Masaaki Miyajima, Yoshiyuki Yonezawa, Tomohisa Kato, Hirokazu Fujiwara, Kimimori Hamada, Akihiro Otsuki, Hajime Okumura

Keywords:

Activation Energy, Partial Dislocation Velocity, PN Diode, Pulse Stress, Stacking Fault

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