Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET

Kumiko Konishi; Ryusei Fujita; Akio Shima; Yasuhiro Shimamoto

doi:10.4028/www.scientific.net/MSF.897.214

Paper Titles

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM
p.197

On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC
p.201

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
p.205

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
p.209

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
p.214

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
p.218

Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence
p.222

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
p.226

Creation and Functionalization of Defects in SiC by Proton Beam Writing
p.233

HomeMaterials Science ForumMaterials Science Forum Vol. 897Modeling of Stacking Fault Expansion Velocity of...

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET

Abstract:

We present a model to explain forward voltage degradation of body diode in 4H-SiC MOSFET, and evaluate the velocity of SF expansion. First, by using in-situ photoluminescence (PL) observation, we investigated how a stacking fault (SF) expands from a basal plane dislocations (BPD) in the 4H-SiC epitaxial layer. Second, double-diffused MOSFETs were developed and measured before and after degradation. Then, the characteristics of the forward voltage degradation were modeled by a combination of PL imaging and electrical measurement, and the calculated characteristics are in good agreement with the measured ones. Finally, we tested the SiC MOSFETs under various stress conditions and evaluated the velocity of the SF expansion by calculation. This results indicate that the velocity of SF expansion increased with increasing forward current density and junction temperature.

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Materials Science Forum (Volume 897)

Pages:

214-217

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.214

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Online since:

May 2017

Authors:

Kumiko Konishi*, Ryusei Fujita, Akio Shima, Yasuhiro Shimamoto

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Body Diode, MOSFET, Stacking Fault

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