Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM

Toshiyuki Isshiki; Masaki Hasegawa; Yoshihisa Orai; Atsushi Miyaki; Takahiro Sato

doi:10.4028/www.scientific.net/MSF.897.197

Paper Titles

4H-SiC Defects Evolution by Thermal Processes
p.181

Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation
p.185

Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
p.189

Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging
p.193

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM
p.197

On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC
p.201

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
p.205

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
p.209

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
p.214

HomeMaterials Science ForumMaterials Science Forum Vol. 897Observation of Basal Plane Dislocation in 4H-SiC...

Observation of Basal Plane Dislocation in 4H-SiC Wafer by Mirror Projection Electron Microscopy and Low-Energy SEM

Abstract:

Basal plane dislocation (BPD) with dislocation lines in shallow areas near the surface in 4H-SiC epitaxial wafer was observed by mirror projection electron microscopy (MPJ) and low-energy scanning electron microscopy (LE-SEM). A contrast of dislocation line of BPD appeared in a MPJ observation as gradually weakened dark line toward the upper stream of offcut of wafer, and the contrast almost agreed with the LE-SEM image taken at the same BPD by not a morphology-sensitive imaging method but a potential-sensitive imaging method. Thus an origin of the contrast corresponding to BPD in MPJ is considered to surface potential change due to charging on dislocation line. MPJ observation can gives a BPD image with same quality as a potential-sensitive image by LE-SEM, in extremely short time and damage-and contamination-free condition at no electron irradiation on wafer.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.197

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Online since:

May 2017

Authors:

Toshiyuki Isshiki*, Masaki Hasegawa, Yoshihisa Orai, Atsushi Miyaki, Takahiro Sato

Keywords:

Basal Plane Dislocation (BPD), Contamination-Free Observation, Low-Energy SEM, Mirror Projection Electron Microscopy, Potential-Sensitive Imaging

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