Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence

Hrishikesh Das; Swapna Sunkari; Hans Naas; Martin Domeij; Andrei Konstantinov; Fredrik Allerstam; Thomas Neyer

doi:10.4028/www.scientific.net/MSF.897.222

Paper Titles

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
p.205

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
p.209

Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
p.214

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
p.218

Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence
p.222

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
p.226

Creation and Functionalization of Defects in SiC by Proton Beam Writing
p.233

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.238

New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization
p.242

HomeMaterials Science ForumMaterials Science Forum Vol. 897Detection of Crystal Defects in High Doped...

Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence

Abstract:

In this work, the detection and characterization of various crystal defects in high doped silicon carbide by photoluminescence (PL) is explored. The detection of basal plane dislocations in high doped epitaxial buffer layers is demonstrated using the near ultraviolet (NUV) spectra. Several characteristic defects in high doped 150mm substrates like grain boundaries and screw dislocations are also detected and characterized using the NUV PL spectra. Further characterization using molten potassium hydroxide etching is presented.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

222-225

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.222

Citation:

Cite this paper

Online since:

May 2017

Authors:

Hrishikesh Das*, Swapna Sunkari, Hans Naas, Martin Domeij, Andrei Konstantinov, Fredrik Allerstam, Thomas Neyer

Keywords:

Basal Plane Dislocation (BPD), Crystal Defects, Grain Boundaries, Photoluminescence, Screw Dislocations, V-Type Epitaxial Defects

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] T. Tanaka, N. Kawabata, Y. Mitani, N. Tomita, M. Tarutani, T. Kuroiwa, Y. Toyoda, M. Imaizumi, H. Sumitani, and S. Yamakawa. Mater. Sci. Forum, 778-780, pp.91-94 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.91

Google Scholar

[2] N. A. Mahadik, R. E. Stahlbush, M. G. Ancona, E. A. Imhoff, K. D. Hobart, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill and F. J. Kub. Appl. Phys. Lett. 100, 042102 (2012).

DOI: 10.1063/1.3679609

Google Scholar

[3] H. Das, S. Sunkari, M. Domeij, A. Konstantinov, F. Allerstam and T. Neyer. ECS Transactions, 69 (11) 29-32 (2015).

DOI: 10.1149/06911.0029ecst

Google Scholar

[4] H. Wang, F. Wu, S. Byrapa, Y. Yang, B. Raghothamachar, M. Dudley, G. Chung, J. Zhang, B. Thomas, E. Sanchez, S. Mueller, D. Hansen and M. Loboda. Materials Science Forum, Vols. 778-780, 332 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.332

Google Scholar

[5] H. Das, S. Sunkari and H. Naas. ECS Transactions, 75 (12) 233-237 (2016).

Google Scholar