Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

Louise Lilja; Ildiko Farkas; Ian Booker; Jawad Hassan; Erik Janzén; J. Peder Bergman

doi:10.4028/www.scientific.net/MSF.897.238

Paper Titles

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
p.218

Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence
p.222

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
p.226

Creation and Functionalization of Defects in SiC by Proton Beam Writing
p.233

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.238

New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization
p.242

Point Defects Investigation of High Energy Proton Irradiated SiC p⁺-i-n Diodes
p.246

New Evidence for the Second Conduction Band in 4H SiC
p.250

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC
p.254

HomeMaterials Science ForumMaterials Science Forum Vol. 897Influence of n-Type Doping Levels on Carrier...

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

Abstract:

In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm^-3 to mid 1E18 cm^-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

238-241

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.238

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Online since:

May 2017

Authors:

Louise Lilja*, Ildiko Farkas, Ian Booker, Jawad Hassan, Erik Janzén, J. Peder Bergman

Keywords:

Auger Recombination, Carrier Lifetime, Chemical Vapor Deposition (CVD), Epitaxial Growth, Photoluminescence

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