New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization

Article Preview

Abstract:

The comprehensive study of the terahertz electroluminescence caused by the Bloch oscillations of the electrons in the natural superlattices of 8H-, 6H-SiC with strong electrical field applied along the natural superlattices axis is represented. The electroluminescence spectra become much broader when the bias field exceeds substantially the threshold field of the Bloch oscillations. This spectral broadening can be explained by an appearance of a new spectral line that is much wider and its maximum is localized at higher energy than lines induced by Bloch oscillations. This line has no link with the Bloch oscillations mechanism and it is a result of the presumed changes in the SiC conduction band with complex electron spectrum structure by applied electrical field.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

242-245

Citation:

Online since:

May 2017

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] F. Bloch, Z. Phys. 52, 555 (1928).

Google Scholar

[2] Zener, Proc. R. Soc. London Ser. A 145, 523 (1934).

Google Scholar

[3] G. N. Wannier, Phys. Rev. 11, 432 (1960).

Google Scholar

[4] K. Leo, Semicond. Sci. Technol. 13, 249, (1998).

Google Scholar

[5] C. Waschke, H.G. Roskos, R. Schwedler, K. Leo, H. Kurz and K. Kohler, Phys. Rev. Lett. 70, 3319 (1993).

DOI: 10.1103/physrevlett.70.3319

Google Scholar

[6] Y. Shimada, K. Hirakawa, M. Odnoblioudov and K.A. Chao, Phys. Rev. Lett. 90, 046806-1 (2003).

Google Scholar

[7] R. Martini, et all, Phys. Rev. B, 54, 14325 (1996).

Google Scholar

[8] V.I. Sankin, Semiconductors, 36, 717, (2002).

Google Scholar

[9] V.I. Sankin, P.P. Sckrebiy, N.S. Savkina, N.S. Kuznetsov, JETP Letters, 77, 34, (2003).

Google Scholar

[10] V.I. Sankin, A.V. Andrianov, A.O. Zakhar`in, and A.G. Petrov, Appl. Phys. Lett., 100, 111109 (2012).

Google Scholar

[11] V.I. Sankin et al, Materials Science Forum, Vols. 821-823, p.277, (2015).

Google Scholar

[12] A. Laref, and S. Laref. Phys. Stat. Sol. (b), 245, No. 1, 89 (2008).

Google Scholar

[13] S.M. Sze, Physics of Semiconductor Devices, A Wiley-Interscience Publication J. Weley&Sons Inc. New York. Chichester. Brisbane. Noronto. Singa pore (1981).

Google Scholar