Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC

Yi Dan Tang; Hua Jun Shen; Xu Fang Zhang; Fei Guo; Yun Bai; Zhao Yang Peng; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.897.395

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Effect of Annealing on the Characteristics of...

Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC

Abstract:

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×10¹⁹ cm^-3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10^-5 Ω/cm² and 7.81×10^-5Ω/cm² after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H–SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti₃SiC₂ was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H-SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti₃SiC₂is key factor for low resistance to P-type 4H–SiC. Moreover, simulations proved that the gradual Ti₃SiC₂ISL reduces or eliminates the effective barrier height at the metal/Ti₃SiC₂/p-type and may also contribute to low contact resistivity.

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Materials Science Forum (Volume 897)

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395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.395

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Online since:

May 2017

Authors:

Yi Dan Tang*, Hua Jun Shen, Xu Fang Zhang, Fei Guo, Yun Bai, Zhao Yang Peng, Xin Yu Liu

Keywords:

Gradual Ti₃SiC₂ ISL, SCRs, Ti/Al Ohmic Contacts, X-Ray Diffraction

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