Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Antonis Stavrinidis; George  Konstantinidis; Konstantinos Vamvoukakis; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.897.407

Paper Titles

Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
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Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC
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Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
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Laser Assisted SiC Wafering Using COLD SPLIT
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Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs
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An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC
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Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
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10+ kV Implantation-Free 4H-SiC PiN Diodes
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4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Salicide-Like Process for the Formation of Gate...

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Abstract:

The self-aligned approach allowed to fabricate 4H-SiC VJFETs with conventional contact lithography with only 4 lithography steps. The main problem of this approach was the gate-source leakage current. In order to address this issue, a salicide process has been adopted resulting in a substantial reduction of the gate-source leakage current. The success of this approach paved the way for fabricating high power 4H-SiC devices with extremely low fabrication cost.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

407-410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.407

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Online since:

May 2017

Authors:

Antonis Stavrinidis*, George Konstantinidis, Konstantinos Vamvoukakis, Konstantinos Zekentes

Keywords:

4H-SiC, Aluminum Dopant Implantation, Salicide, Self-Aligned Silicide Process, TSI-VJFET, Vertical Channel

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References

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[3] The term salicide, is a compaction of the phrase self-aligned silicide.

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