Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

Takeshi Tawara; Tetsuya Miyazawa; Mina Ryo; Masaki Miyazato; Takumi Fujimoto; Kensuke Takenaka; Shinichiro Matsunaga; Masaaki Miyajima; Akihiro Otsuki; Yoshiyuki Yonezawa; Tomohisa Kato; Hajime Okumura; Tsunenobu Kimoto; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.897.419

Paper Titles

Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
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Laser Assisted SiC Wafering Using COLD SPLIT
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Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs
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An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC
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Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
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10+ kV Implantation-Free 4H-SiC PiN Diodes
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4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
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Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
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6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Suppression of the Forward Degradation in 4H-SiC...

Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer

Abstract:

Application of highly N-doped buffer layers or a (N+B)-doped buffer layer to PiN diodes to suppress the expansion of Shockley stacking faults (SSFs) from the epilayer/substrate interface was studied. These buffer layers showed very short minority carrier lifetimes of 30–200 ns at 250°C. The PiN diodes were fabricated with buffer layers of various thicknesses and were then tested under high current injection conditions of 600A/cm². The thicker buffer layers with shorter minority carrier lifetimes demonstrated the suppression of SSFs expansion and thus that of diode degradation.

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Materials Science Forum (Volume 897)

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419-422

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.419

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Online since:

May 2017

Authors:

Takeshi Tawara*, Tetsuya Miyazawa, Mina Ryo, Masaki Miyazato, Takumi Fujimoto, Kensuke Takenaka, Shinichiro Matsunaga, Masaaki Miyajima, Akihiro Otsuki, Yoshiyuki Yonezawa, Tomohisa Kato, Hajime Okumura, Tsunenobu Kimoto, Hidekazu Tsuchida

Keywords:

Forward Degradation, Minority Carrier Lifetime, PiN Diode

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