Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

Shuai Yang; Qing Wen Song; Xiao Yan Tang; Yi Meng Zhang; Yu Ming Zhang; Yi Men Zhang; Hao Yuan; Qiu Jie Sun

doi:10.4028/www.scientific.net/MSF.897.431

Paper Titles

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC
p.411

Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
p.419

10+ kV Implantation-Free 4H-SiC PiN Diodes
p.423

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
p.427

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
p.431

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
p.435

Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
p.439

An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces
p.443

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons
p.447

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Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

Abstract:

In this paper, a novel 4H-SiC trench JBS (TkJBS) with high-k semi-insulating polycrystalline silicon (SIPOS) is proposed. By adopting a new high-k dielectrics-trench structure, the peak electric field at the corner of P+ region (COP) in Silicon Carbide (SiC) can be weakened significantly, and the device breakdown voltage can be enhanced significantly. SiC TkJBS has a 60.7% higher breakdown voltage (BV) and a 110.6% higher Baliga’s figure of merit (BFOM) than the conventional SiC JBSs, and the surface electric field (E_sf) of the SiC TkJBS is 0.73 MV/cm lower than it at breakdown voltages, resulting in a much lower tunneling current (I_r). The reverse recovery characteristics of SiC TkJBS are also slightly better than those of the SiC JBS. It is indicated that SiC TkJBS is a promising candidate for next-generation high power diodes.