Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons

Alexander A. Lebedev; Klavdia S. Davydovskaya; Vitalii V. Kozlovski; Oleg Korolkov; Natalja Sleptsuk; Jana Toompuu

doi:10.4028/www.scientific.net/MSF.897.447

Paper Titles

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
p.431

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
p.435

Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
p.439

An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces
p.443

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons
p.447

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension
p.451

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
p.455

Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures
p.459

Lifetime Control in SiC PiN Diodes Using Radiation Defects
p.463

HomeMaterials Science ForumMaterials Science Forum Vol. 897Degradation of 600-V 4H-SiC Schottky Diodes under...

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons

Abstract:

In this paper investigation of degradation 4H SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV was doine. It was determined the carrier removal rate (Vd), which amounted to 0.07 - 0.09 cm^-1. It is shown that the investigated Schottky diodes retained rectifying current-voltage characteristics of up to doses ~ 10¹⁷ cm^-2. It is concluded that the radiation resistance of SiC Schottky diodes is much greater than the radiation resistance of Si p-i-n diodes with the same breakdown voltages

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

447-450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.447

Citation:

Cite this paper

Online since:

May 2017

Authors:

Alexander A. Lebedev*, Klavdia S. Davydovskaya, Vitalii V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu

Keywords:

Carrier Removal Rate, Electrons, Irradiation, Radiation Defects, Reverse Recovery Time, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] B.J. Baliga, Semiconductors for high‐voltage, vertical channel field‐effect transistors. J. Appl. Phys, 53 (1982) 1759-1764.

DOI: 10.1063/1.331646

Google Scholar

[2] A.A. Lebedev and V.E. Chelnokov, Wide-gap semiconductors for high-power electronics, Semiconductors, 33 (1999) 999-1001.

DOI: 10.1134/1.1187823

Google Scholar

[3] W.J. Choyke. A review of radiation damage in SiC. Inst. Phys. Conf. Ser., 31 (1977) 58-69.

Google Scholar

[4] G. Casse, Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC, Nuclear Instruments and Methods in Physics Reserch A 598 (2009) 54-60.

DOI: 10.1016/j.nima.2008.08.019

Google Scholar

[5] J. Metcalfe, Silicon Detectors for the sLHC, Nuclear Physics B, (Proc. Suppl. ) 215 (2011)151-153.

Google Scholar

[6] Informationon http: /cree. com.

Google Scholar

[7] C. Hemmingson, N.T. Son, O. Kordina, E. Janzen, J.L. Lindstrom, S. Savarge, and N. Nordel, Capacitance transient studies of electron irradiated 4H-SiC, Mater. Sci. Eng. B46 (1997) 336–339.

DOI: 10.1016/s0921-5107(96)01999-x

Google Scholar

[8] C. Hemmingson, N.T. Son, O. Kordina, E. Janzen. J.P. Bergman, J.L. Lindstrom, S. Savarge, and N. Nordel, Deep level defects in electron-irradiated 4H SiC epitaxial layers, J. Appl. Phys. 81(1997) 6155–6159.

DOI: 10.1063/1.364397

Google Scholar

[9] M.L. David, G. Alferi, E.M. Monakhov, A. Hallen, C. Blanchard, B.G. Svensson, J.F. Barbot Electrically active defects in irradiated 4H-SiC, J. Appl. Phys95(2004) 4728–4733.

DOI: 10.1063/1.1689731

Google Scholar

[10] V.V. Emtsev, A.M. Ivanov, V.V. Kozlovski, A.A. Lebedev, G.A. Oganesyan, N.B. Strokan, G. Wagner., Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of n-type, Semiconductors, 2012, 46, No. 4 (2012).

DOI: 10.1134/s1063782612040069

Google Scholar

[11] V.V. Kozlovski, A.A. Lebedev, V.V. Emtsev, G.A. Oganesyan, Effect of the Energy of Recoil Atoms on Conductivity Compensation in Moderately Doped n-Si and n-SiC under Irradiation with MeV Electrons and Protons, Nuclear Instruments and Methods in Physics Research Section B 384 (2016).

DOI: 10.1016/j.nimb.2016.08.003

Google Scholar