Lifetime Control in SiC PiN Diodes Using Radiation Defects

Pavel Hazdra; Stanislav Popelka

doi:10.4028/www.scientific.net/MSF.897.463

Paper Titles

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons
p.447

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension
p.451

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
p.455

Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures
p.459

Lifetime Control in SiC PiN Diodes Using Radiation Defects
p.463

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
p.467

On the Influence of Active Area Design on the Performance of SiC JBS Diodes
p.471

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
p.477

0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
p.483

HomeMaterials Science ForumMaterials Science Forum Vol. 897Lifetime Control in SiC PiN Diodes Using Radiation...

Lifetime Control in SiC PiN Diodes Using Radiation Defects

Abstract:

Application of radiation defects for lifetime control in contemporary SiC PiN diodes was investigated using the calibrated device simulator ATLAS from Silvaco, Inc. Recombination models accounting for the effect of deep levels introduced by the irradiation were set according to experimental results obtained by C-V and DLTS measurements performed on low-doped n-type SiC epilayers irradiated with 4.5 MeV electrons and 670 keV protons. Global (4.5 MeV electron irradiation) and local (700 keV proton irradiation) lifetime reduction was then applied on the 2A/10kV SiC PiN diode and the ON-state and reverse recovery characteristics were simulated and compared. Results show that the proton irradiation can substantially improve the trade‑off between the diode ON‑state and turn‑OFF losses. Compared to the electron irradiation, the local lifetime killing by protons allows achieving better trade-off and softer recovery curves.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

463-466

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.463

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Online since:

May 2017

Authors:

Pavel Hazdra*, Stanislav Popelka

Keywords:

Lifetime Control, Parameter Optimization, PiN Diode, Radiation Defects, Silicon Carbide (SiC)

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