The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

Kohei Ebihara; Koutarou Kawahara; Hiroshi Watanabe; Shuhei Nakata; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.897.467

Paper Titles

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension
p.451

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
p.455

Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures
p.459

Lifetime Control in SiC PiN Diodes Using Radiation Defects
p.463

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
p.467

On the Influence of Active Area Design on the Performance of SiC JBS Diodes
p.471

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
p.477

0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
p.483

1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
p.489

HomeMaterials Science ForumMaterials Science Forum Vol. 897The Effect of Incomplete Ionization on SiC Devices...

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

Abstract:

SiC devices such as MOSFETs and SBDs reduce power loss in fast-switching condition as compared to Si devices. However, shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices. We already reported that high densities of deep levels were discovered in Al⁺-implanted samples other than the shallow Al acceptor level. In this work, we applied the deep level to the TCAD simulation, and examined the behavior of the carriers at high dV/dt conditions.

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Materials Science Forum (Volume 897)

Pages:

467-470

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.467

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Online since:

May 2017

Authors:

Kohei Ebihara*, Koutarou Kawahara, Hiroshi Watanabe, Shuhei Nakata, Satoshi Yamakawa

Keywords:

Deep Level, High Speed Switching, Incomplete Ionization, Silicon Carbide (SiC), TCAD

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