Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures

Abstract:

Neutron irradiation (~1 MeV, dose 10¹⁴-5.6∙10¹⁵ neutron/cm²) of packaged diodes based on 6H-SiC pn structures (with the base n-layer doped to ~5∙10¹⁶ cm^-3) has been studied. In addition to the well-known rise in the series resistance of the diodes, the effect of a partial suppression of the excess current in both forward-and reverse-biased diodes and that of an increase in the recombination current, probably associated with the decrease in the nonequilibrium carrier lifetime, were discovered and discussed. These effects are common to 6H-and 4H-SiC pn structures.

• Periodical: Materials Science Forum (Volume 897)
• Pages: 459-462
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.897.459
• Online since: May 2017
• Authors: Anatoly M. Strel'chuk*, V.T. Gromov, Viktor V. Zelenin, A.N. Kuznetsov, Alexander A. Lebedev, N.G. Orlov, N.S. Savkina, V.P. Shukailo
• Keywords: 6H-SiC pn Structures, Excess Current, Neutron Irradiation, Radiation Hardness, Recombination Current, Series Resistance

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