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Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension
Abstract:
The static and dynamic characteristics of 13-kV class 4H-SiC junction barrier Schottky (JBS) diodes with a three-zone junction termination extension (JTE) are presented. Using an anisotropy breakdown model, technology computer-aided design simulation of devices with a three-zone JTE agrees well with the obtained experimental results, correctly predicting a sharp drop in blocking voltage at high JTE acceptor concentrations. The forward voltage of the JBS diode at 75°C and a forward current of 500 mA is reduced to approximately one-ninth by that of 13 series-connected 1000-V Si PiN diodes. This suggests that conduction losses of traditional high-voltage circuits which conventionally use series-connected devices can be drastically reduced by replacing the series-connected devices with a single 13-kV class SiC JBS diode. Moreover, the reverse recovery current waveform of the 13-kV class SiC JBS diode shows that these diodes have lower reverse recovery losses than a 13-kV SiC PiN diode.
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451-454
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Online since:
May 2017
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© 2017 Trans Tech Publications Ltd. All Rights Reserved
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