6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

Yuan Bu; Hiroyuki Yoshimoto; Kumiko Konishi; Akio Shima; Yasuhiro Shimamoto

doi:10.4028/www.scientific.net/MSF.897.435

Paper Titles

Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
p.419

10+ kV Implantation-Free 4H-SiC PiN Diodes
p.423

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
p.427

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
p.431

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
p.435

Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
p.439

An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces
p.443

Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons
p.447

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension
p.451

HomeMaterials Science ForumMaterials Science Forum Vol. 8976.5 kV 4H-SiC PiN Diodes without Bipolar...

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

Abstract:

We designed, fabricated and evaluated 6.5 kV SiC PiN diodes. In order to suppress process-induced basal plane dislocation (BPD) in SiC PiN diodes, we improved the fabrication processes. The I_r-V_r measurements showed that the breakdown voltage was over 9 kV at room temperature (25 °C). The leakage currents (I_leak) at 6.5 kV are as low as 5.9×10^-6 mA/cm² (25 °C) and 9.7×10^-5 mA/cm² (150 °C). The maximum recovery loss among our switching test results was 6.7 mJ at 150 °C, 60 A. Moreover, the diodes fabricated on BPD-free area are very stable during applying 20 A current for 8~1000 h. Photoluminescence (PL) observation and KOH etching indicated that no BPD generated during improved fabrication processes.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

435-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.435

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Online since:

May 2017

Authors:

Yuan Bu*, Hiroyuki Yoshimoto, Kumiko Konishi, Akio Shima, Yasuhiro Shimamoto

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Bipolar Degradation, PiN Diode

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