4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

Johannes Schoeck; Jonas Buettner; Mathias Rommel; Tobias Erlbacher; Anton J. Bauer

doi:10.4028/www.scientific.net/MSF.897.427

Paper Titles

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs
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An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC
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Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
p.419

10+ kV Implantation-Free 4H-SiC PiN Diodes
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4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
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Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
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6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
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Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
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An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces
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HomeMaterials Science ForumMaterials Science Forum Vol. 8974.5 kV SiC Junction Barrier Schottky Diodes with...

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

Abstract:

High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73 % of the theoretical breakdown voltage. The epitaxial layer was 32 μm thick, with a nitrogen doping concentration of 1 x 10¹⁵ cm^-3. The JBS diodes have been manufactured in a 100 mm SiC prototyping line, using well established processing technology, to achieve cost-efficient devices.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

427-430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.427

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Online since:

May 2017

Authors:

Johannes Schoeck*, Jonas Buettner, Mathias Rommel, Tobias Erlbacher, Anton J. Bauer

Keywords:

DBC-Mounted, Floating Field Rings, Junction Barrier Schottky (JBS) Diode

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References

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