1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

Dethard Peters; Thomas Aichinger; Thomas Basler; Wolfgang Bergner; Daniel Kueck; Romain Esteve

doi:10.4028/www.scientific.net/MSF.897.489

Paper Titles

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
p.467

On the Influence of Active Area Design on the Performance of SiC JBS Diodes
p.471

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
p.477

0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
p.483

1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
p.489

3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode
p.493

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
p.497

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs
p.501

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions
p.505

HomeMaterials Science ForumMaterials Science Forum Vol. 8971200V SiC Trench-MOSFET Optimized for High...

1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

Abstract:

A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.