Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Si Yang Liu; Yi Fan Jiang; Woong Je Sung; Xiao Qing Song; B. Jayant Baliga; Wei Feng Sun; Alex Q. Huang

doi:10.4028/www.scientific.net/MSF.897.501

Paper Titles

0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
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1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode
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1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
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Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs
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Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions
p.505

Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments
p.509

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
p.513

Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)
p.517

HomeMaterials Science ForumMaterials Science Forum Vol. 897Understanding High Temperature Static and Dynamic...

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Abstract:

High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

501-504

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.501

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Online since:

May 2017

Authors:

Si Yang Liu, Yi Fan Jiang, Woong Je Sung, Xiao Qing Song, B. Jayant Baliga*, Wei Feng Sun, Alex Q. Huang

Keywords:

Dynamic Characteristics, High Temperature, Physics, SiC MOSFET, Static Characteristics

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References

[1] S. Ryu, C. Capell, E. Van Brunt, C. Jonas, J. Clayton, J. Palmour, M. Hinojosa, C. W. Tipton and C. Scozzie, Ultra High Voltage MOS Controlled 4H-SiC Power Switching Devices, Semiconductor Science Technology, 30, 084001 (2015).

DOI: 10.1088/0268-1242/30/8/084001

Google Scholar

[2] Doohyung Cho, Seulgi Sim, Kunsik Park, Jongil Won, Sanggi Kim and Kwangsoo Kim, High-voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer, Japanese Journal of Applied Physics, 54, 121301 (2015).

DOI: 10.7567/jjap.54.121301

Google Scholar

[3] S. Noll, M. Rambach, M. Grieb, D. Scholten, A. J. Bauer and L. Frey, Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors, Materials Science Forum, 778-780, 702-705 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.702

Google Scholar

[4] C. Y. Lee, C. T. Yen, K. W. Chu, Y. S. Chen, C. C. Hung, L.S. Lee, C. C. Huang and M. J. Tsai, A Novel 4H-SiC Trench MOS Barrier Schottky Rectifier Fabricated by a Two-mask Process, ISPSD, 171-174 (2013).

DOI: 10.1109/ispsd.2013.6694473

Google Scholar

[5] Z. Chen, Y. Y. Yao, M. Danilovic, D. Boroyevich, Performance Evaluation of SiC Power MOSFETs for High-temperature Applications, EPE-PEMC, (2012).

DOI: 10.1109/epepemc.2012.6397198

Google Scholar

[6] Y. Nanen, M. Aketa, Y. Nakano, H. Asahara, T. Nakamura. Electrical Characterization of 1. 2 kV-Class SiC MOSFET at High Temperature up to 380°C, Materials Science Forum. 858, 885-888 (2016).

DOI: 10.4028/www.scientific.net/msf.858.885

Google Scholar

[7] B. Maxime, O. Remy, C. Thibault, B. Pierre, O. Sebastion, T. Dominique, Electrical Performances and Reliability of Commercial SiC MOSFETs at high temperature and in SC Conditions, EPE-ECCE, (2015).

DOI: 10.1109/epe.2015.7309455

Google Scholar

[8] B. J. Baliga, Fundamentals of Power Semiconductor Devices, Springer Science, (2008).

Google Scholar