Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments

Daniel B. Habersat; Ronald Green; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.897.509

Paper Titles

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Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs
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Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions
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Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments
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Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
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Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)
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Short-Circuit Robustness Testing of SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Feasibility of SiC Threshold Voltage Drift...

Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments

Abstract:

We reviewed the practical challenges of assessing the threshold voltage drift of SiC MOSFETs in the context of a commercial production environment and qualification standards. Stress bias interruption is a key challenge owing to the rapid recovery of threshold following the removal of bias and the necessity of delays and bias interruptions when qualifying device lots. The test standards in use proscribe how such interruptions should be handled using a re-application of the stress once the device is ready for characterization but these turn out to be completely inadequate when dealing with the trapping mechanics of SiC MOS. Our data indicates that a relatively short stress re-application can be successful at restoring a majority of the threshold voltage drift, scaling with the square root of the interruption time. Additionally, it is important to re-apply the stress bias even for brief interruptions since the threshold recovers so quickly (as opposed to the 96-hour stress interrupt window that is allowed before any re-application is necessary in JESD22 A-108D).

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Periodical:

Materials Science Forum (Volume 897)

Pages:

509-512

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.509

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Online since:

May 2017

Authors:

Daniel B. Habersat*, Ronald Green, Aivars J. Lelis

Keywords:

MOSFET, Qualification Standards, Silicon Carbide (SiC), Test Methods, Threshold Voltage Instability

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