Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

Q.J. Zhang; G. Wang; Charlotte Jonas; Craig Capell; Steve Pickle; P. Butler; Daniel J. Lichtenwalner; Edward van Brunt; Sei Hyung Ryu; Jim Richmond; Brett Hull; Jeff Casady; Scott Allen; John W. Palmour; Qing Chun Zhang

doi:10.4028/www.scientific.net/MSF.897.521

Paper Titles

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions
p.505

Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments
p.509

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
p.513

Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)
p.517

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
p.521

Short-Circuit Robustness Testing of SiC MOSFETs
p.525

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
p.529

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
p.533

Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
p.537

HomeMaterials Science ForumMaterials Science Forum Vol. 897Next Generation Planar 1700 V, 20 mΩ 4H-SiC...

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

Abstract:

Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2ⁿ^d Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm² has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3^rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.