Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes

Victor Soler; Maria Cabello; Maxime Berthou; Josep Montserrat; José Rebollo; Philippe Godignon; Enea Bianda; Andrei Mihaila

doi:10.4028/www.scientific.net/MSF.897.537

Paper Titles

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
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Short-Circuit Robustness Testing of SiC MOSFETs
p.525

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
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Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
p.533

Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
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Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode
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Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
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Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Impact of Channel Mobility Improvement Using Boron...

Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes

Abstract:

SiC planar VDMOS of three voltages ratings (1.7kV, 3.3kV and 4.5kV) have been fabricated using a Boron diffusion process into the thermal gate oxide for improving the SiO₂/SiC interface quality. Experimental results show a remarkable increase of the effective channel mobility which increases the device current capability, especially at room temperatures. At high temperatures, the impact of the Boron treatment is lower since the major contribution of the drift layer to the on-resistance. In addition, the intrinsic body diode characteristics approximate to that of an ideal PiN diode, and the blocking capability is not compromised by the use of Boron for the gate oxide formation.

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Materials Science Forum (Volume 897)

Pages:

537-540

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.537

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Online since:

May 2017

Authors:

Victor Soler*, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Enea Bianda, Andrei Mihaila

Keywords:

Boron, Field-Effect Mobility, High Voltage, Power MOSFET, Temperature Behavior

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References

[1] P. Roussel, SiC Market and Industry Update, International SiC Power Electronics Applications Workshop, ISiCPEAW, Kista, Sweden, (2011).

Google Scholar

[2] J. Millán, P. Godignon, X. Perpiñà, J. Rebollo., A survey of wide band gap power semiconductor devices, IEEE Trans. on Power Electronics, vol. 29, no. 5, pp.2155-2163, (2014).

DOI: 10.1109/tpel.2013.2268900

Google Scholar

[3] http: /www. genesicsemi. com/index. php/sic-products/schottky.

Google Scholar

[4] http: /www. wolfspeed. com/power/products/sic-mosfets/table.

Google Scholar

[5] http: /www. rohm. com.

Google Scholar

[6] M. K. Das, Recent Advances in (0001) 4H-SiC MOS Device Technology, Materials Science Forum, vols. 457-460, pp.1275-1280, (2004).

DOI: 10.4028/www.scientific.net/msf.457-460.1275

Google Scholar

[7] P. Fiorenza et Al., SiC/4H-SiC interface doping during post-deposition annealing of the oxide in N2O and POCl3, Applied Physics Letters, Vol. 105 , nº15, Oct. (2013).

DOI: 10.1063/1.4824980

Google Scholar

[8] D. Okamoto, H. Yano, K. Hirata, T. Hatayama and T. Fuyuki, Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide, IEEE Electron Dev. Lett., vol. 31, no. 7, pp.710-712, (2010).

DOI: 10.1109/led.2010.2047239

Google Scholar

[9] D. J. Lichtenwalner et Al., High-Mobility SiC MOSFETs with Chemically Modified Interfaces, Materials Science Forum, Vols. 821-823, pp.749-752, June (2015).

DOI: 10.4028/www.scientific.net/msf.821-823.749

Google Scholar

[10] D. Okamoto et Al. Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation, IEEE Electron Device Letters, vol. 35, no. 12, p.1176–1178, Dec. (2014).

DOI: 10.1109/led.2014.2362768

Google Scholar

[11] M. Cabello, V. Soler, J. Montserrat, J. Rebollo, J. Millán and P. Godignon, High mobilities SiC N-MOSFET using nitrided gate oxide with Boron diffusion treatment,. Proc. of E-MRS, Symposium L, Lille (France), May (2016).

DOI: 10.1109/ispsd.2016.7520833

Google Scholar

[12] V. Soler, M. Cabello, M. Berthou, J. Montserrat, J. Rebollo, J. Millan, P. Godignon, E. Bianda, A. Mihaila. 4. 5kV SiC power MOSFET with Boron Doped Gate Dielectric. ISPSD (2016).

DOI: 10.1109/ispsd.2016.7520833

Google Scholar