Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD

Johanna Müting; Bhagyalakshmi Kakarla; Ulrike Grossner

doi:10.4028/www.scientific.net/MSF.897.553

Paper Titles

Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
p.537

Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode
p.541

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
p.545

Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
p.549

Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
p.553

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
p.557

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
p.563

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C
p.567

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation
p.571

HomeMaterials Science ForumMaterials Science Forum Vol. 897Comprehensive and Detailed Study on the Modeling...

Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD

Abstract:

The main scattering mechanisms reducing the channel mobility and thus the typical performance of a SiC power MOSFET are reviewed. It is demonstrated that the Poisson equation within the drift-diffusion model is able to account for the effects of ionized impurity scattering. Furthermore, a correlation between the size of macro-or nanosteps at the SiC/SiO₂ interface and the corresponding fitting parameter within the Lombardi surface roughness model is established. By qualitatively reproducing the typical performance of a commercial SiC power MOSFET a baseline for the TCAD modeling of power MOSFETs is provided.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

553-556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.553

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Online since:

May 2017

Authors:

Johanna Müting*, Bhagyalakshmi Kakarla, Ulrike Grossner

Keywords:

Device Modeling, Ionized Impurity Scattering, Surface Roughness, TCAD Simulation

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