Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

Vidya Naidu; Siva Kotamraju

doi:10.4028/www.scientific.net/MSF.897.571

Paper Titles

Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
p.553

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
p.557

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
p.563

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C
p.567

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation
p.571

Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
p.575

Total Dose Effects on 4H-SiC Bipolar Junction Transistors
p.579

16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development
p.583

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
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Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

Abstract:

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO₂ and ZrO₂ are investigated. SiC IGBT with HfO₂ and ZrO₂ exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO₂. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

571-574

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.571

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Online since:

May 2017

Authors:

Vidya Naidu, Siva Kotamraju*

Keywords:

High-k Dielectrics, Power Dissipation Trend, Switching Characteristics, Tail Current

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