Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs

Aderinto Ogunniyi; James Schrock; Miguel Hinojosa; Heather O’Brien; Aivars J. Lelis; Stephen Bayne; Sei Hyung Ryu

doi:10.4028/www.scientific.net/MSF.897.575

Paper Titles

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
p.557

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
p.563

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C
p.567

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation
p.571

Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
p.575

Total Dose Effects on 4H-SiC Bipolar Junction Transistors
p.579

16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development
p.583

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
p.587

Capacitances in 4H-SiC TSI-VJFETs
p.591

HomeMaterials Science ForumMaterials Science Forum Vol. 897Simulation Study of Switching-Dependent Device...

Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs

Abstract:

The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determine by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

575-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.575

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Online since:

May 2017

Authors:

Aderinto Ogunniyi*, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars J. Lelis, Stephen Bayne, Sei Hyung Ryu

Keywords:

Ambipolar Lifetime, Gate Current, Gate Turn-Off Thyristor, Silicon Carbide (SiC), Turn-On Delay

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