Total Dose Effects on 4H-SiC Bipolar Junction Transistors

Sethu Saveda Suvanam; Luigia Lanni; B. Gunnar Malm; Carl Mikael Zetterling; Anders Hallén

doi:10.4028/www.scientific.net/MSF.897.579

Paper Titles

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
p.563

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C
p.567

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation
p.571

Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
p.575

Total Dose Effects on 4H-SiC Bipolar Junction Transistors
p.579

16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development
p.583

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
p.587

Capacitances in 4H-SiC TSI-VJFETs
p.591

Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations
p.595

HomeMaterials Science ForumMaterials Science Forum Vol. 897Total Dose Effects on 4H-SiC Bipolar Junction...

Total Dose Effects on 4H-SiC Bipolar Junction Transistors

Abstract:

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×10¹¹, 1×10¹² and 1×10¹³ cm^-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10^-15 cm², which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.