Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

Sei Hyung Ryu; Daniel J. Lichtenwalner; Edward van Brunt; Craig Capell; Michael J. O’Loughlin; Charlotte Jonas; Yemane Lemma; J. Zhang; Jim Richmond; Albert A. Burk; Brett Hull; Heather O’Brien; Aderinto Ogunniyi; Aivars J. Lelis; Jeff Casady; David Grider; Scott Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.897.587

Paper Titles

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation
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Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
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Total Dose Effects on 4H-SiC Bipolar Junction Transistors
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16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development
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Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
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Capacitances in 4H-SiC TSI-VJFETs
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Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations
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Tuning Performance of Silicon Carbide Micro-Resonators
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Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Impact of Carrier Lifetime Enhancement Using High...

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

Abstract:

The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140 μm thick drift layers, with and without 1450°C lifetime enhancement oxidation (LEO) process, were compared. The LEO process increased the average carrier lifetime in p-type epi layer from 0.9 μs to 6.25 μs, and it was observed that the effectiveness of the lifetime enhancement process was very sensitive to the doping concentration. The device with the LEO process showed a significant reduction in forward voltage drop and a substantially lower holding current, as expected from the carrier lifetime measurements. However, a slight reduction in blocking capability was also observed from the devices treated with LEO process. The common emitter current gain (β) of the wide base test NPN BJT was approximately 10X higher for the wafer with LEO process.