Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing

Gheorghe Pristavu; Gheorghe Brezeanu; Marian Badila; Florin Draghici; Razvan Pascu; Florea Craciunoiu; Ion Rusu; Adriana Pribeanu

doi:10.4028/www.scientific.net/MSF.897.606

Paper Titles

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
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Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations
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Tuning Performance of Silicon Carbide Micro-Resonators
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Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
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Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain
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Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
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Optimization of 4H-SiC Photodiodes as Selective UV Sensors
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Barrier Stability of Pt/4H-SiC Schottky Diodes...

Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing

Abstract:

Different characterization techniques have been used in order to evaluate the electrical behavior of Pt/SiC-Schottky diodes and determine their capability as temperature sensors. I-V characteristics for fabricated devices were measured up to 400°C. Subsequent conventional parameter extraction evinced a barrier height increase with temperature, suggesting inhomogeneous contact formation. The energy activation method was carried out in order to identify both the effective barrier height for the devices and the non-uniformity parameter (p). Despite severe degrees of contact inhomogeneity, the diodes were found adequate for temperature sensing applications over the 26°C – 400°C range, with sensitivities up to 1.59 mV/°C.

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Materials Science Forum (Volume 897)

Pages:

606-609

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.606

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Online since:

May 2017

Authors:

Gheorghe Pristavu, Gheorghe Brezeanu*, Marian Badila, Florin Draghici, Razvan Pascu, Florea Craciunoiu, Ion Rusu, Adriana Pribeanu

Keywords:

Inhomogeneous Contact, Non-Uniformity Parameter, Pt/SiC Schottky Barrier, Temperature Sensor

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