Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration

C.D. Matthus; Tobias Erlbacher; Bernhard Schöfer; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.897.618

Paper Titles

Tuning Performance of Silicon Carbide Micro-Resonators
p.601

Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
p.606

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain
p.610

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
p.614

Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration
p.618

Optimization of 4H-SiC Photodiodes as Selective UV Sensors
p.622

Silicon Carbide Radiation Detectors for Medical Applications
p.626

4H-SiC PIN Diode as High Temperature Multifunction Sensor
p.630

Localized Surface Plasmon on 6H SiC with Ag Nanoparticles
p.634

HomeMaterials Science ForumMaterials Science Forum Vol. 897Implementation of 4H-SiC Pin-Diodes as Nearly...

Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration

Abstract:

The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm². Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

618-621

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.618

Citation:

Cite this paper

Online since:

May 2017

Authors:

C.D. Matthus*, Tobias Erlbacher, Bernhard Schöfer, Anton J. Bauer, Lothar Frey

Keywords:

CCFB, High Temperature, Integrated System, Pin-Diode, PTAT, Temperature Sensor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] A. De Luca, V. Pathirana, S.Z. Ali, D. Dragomirescu, F. Udrea, Experimental, analytical and numerical investigation of non-linearity of SOI diode temperature sensors at extreme temperatures, Sensors and Actuators A: Physical 222 (2015) 31-38.

DOI: 10.1016/j.sna.2014.11.023

Google Scholar

[2] S. Rao, G. Pangallo, F.G.D. Corte, 4H-SiC p-i-n diode as Highly Linear Temperature Sensor, IEEE Transactions on Electron Devices 63 (2016) 414-418.

DOI: 10.1109/ted.2015.2496913

Google Scholar

[3] S. Rao, G. Pangallo, F.G.D. Corte, Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, IEEE Electron Device Letters 36 (2015) 1205-1208.

DOI: 10.1109/led.2015.2481721

Google Scholar

[4] N. Zhang, C. Lin, D.G. Senesky, A.P. Pisano, Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C, Applied Physics Letters, 104 (2014) 073504.

DOI: 10.1063/1.4865372

Google Scholar

[5] C.D. Matthus, T. Erlbacher, A. Burenkov, A.J. Bauer, L. Frey, Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – simulation and characterization, Material Science Forum 858 (2016), 1032-1035.

DOI: 10.4028/www.scientific.net/msf.858.1032

Google Scholar