Optimization of 4H-SiC Photodiodes as Selective UV Sensors

C.D. Matthus; A. Burenkov; Tobias Erlbacher

doi:10.4028/www.scientific.net/MSF.897.622

Paper Titles

Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
p.606

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain
p.610

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
p.614

Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration
p.618

Optimization of 4H-SiC Photodiodes as Selective UV Sensors
p.622

Silicon Carbide Radiation Detectors for Medical Applications
p.626

4H-SiC PIN Diode as High Temperature Multifunction Sensor
p.630

Localized Surface Plasmon on 6H SiC with Ag Nanoparticles
p.634

Chemical Stability of Si-SiC Nanostructures under Physiological Conditions
p.638

HomeMaterials Science ForumMaterials Science Forum Vol. 897Optimization of 4H-SiC Photodiodes as Selective UV...

Optimization of 4H-SiC Photodiodes as Selective UV Sensors

Abstract:

The spectral responsivity of 4H-SiC photodiodes was studied and optimized in this paper with the aim to realize UV photo-sensors, selectively sensitive either to harder or to softer UV radiation. The spectral selectivity of the SiC-photodiodes was achieved by optimizing doping profiles in the active regions of the photodiodes and of the anti-reflective coating. A shallow doping profile of the p⁺-emitter allowed an enhancement of sensitivity for hard UV radiation. Deeper doping profiles were chosen for detection of softer UV radiation. The impact of the variations of the thickness of protective and anti-reflective layers was studied as well.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

622-625

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.622

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Online since:

May 2017

Authors:

C.D. Matthus*, A. Burenkov, Tobias Erlbacher

Keywords:

Numerical Simulation, Optimization, Photodiode, UV Sensor

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References

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