Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

Alexey V. Afanasyev; Vladimir A. Ilyin; Victor V. Luchinin; Sergey A. Reshanov; Adolf Schöner; K.A. Sergushichev; A.A. Smirnov

doi:10.4028/www.scientific.net/MSF.897.614

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Effect of Neutron Irradiation on Epitaxial 4H-SiC...

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

Abstract:

4H-SiC UV-photodetectors based on full-epitaxial p ⁺p^-n⁺ multilayer structures werefabricated. The diodes were irradiated with fast neutrons up to the fluence of 1·10¹⁴ cm^-2 . Current-voltage characteristics, life time of non-equilibrium charge carriers as well as photosensitivityspectra of the diodes before and after irradiation were investigated. The studies showed that PiNUV-photodiodes with base doping below 1·10¹⁵ cm^-3 retain their performance up to the fluence of5·10¹² neutrons per cm² . The further increase in fast neutron fluence stimulates the creation ofexcessive deep recombination centers. This leads to degradation of I-V-characteristics, reduction ofcarrier life time and, consequently, to degradation of the photosensitivity of devices.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

614-617

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.614

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Online since:

May 2017

Authors:

Alexey V. Afanasyev*, Vladimir A. Ilyin, Victor V. Luchinin, Sergey A. Reshanov, Adolf Schöner, K.A. Sergushichev, A.A. Smirnov

Keywords:

Neutron Irradiation, Photodiode, Radiation Resistance, UV

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