Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations

Diane Perle Sadik; Jang Kwon Lim; Juan Colmenares; Mietek Bakowski; Hans Peter Nee

doi:10.4028/www.scientific.net/MSF.897.595

Paper Titles

Total Dose Effects on 4H-SiC Bipolar Junction Transistors
p.579

16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development
p.583

Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
p.587

Capacitances in 4H-SiC TSI-VJFETs
p.591

Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations
p.595

Tuning Performance of Silicon Carbide Micro-Resonators
p.601

Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
p.606

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain
p.610

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes
p.614

HomeMaterials Science ForumMaterials Science Forum Vol. 897Comparison of Thermal Stress during Short-Circuit...

Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations

Abstract:

The temperature evolution during a short-circuit in the die of three different Silicon Carbide1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructedstructure of commercially available devices. The location of the hottest point in the device iscompared. Finally, the analysis supports the necessity to turn off short-circuit events rapidly in orderto protect the device after a fault.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

595-598

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.595

Citation:

Cite this paper

Online since:

May 2017

Authors:

Diane Perle Sadik*, Jang Kwon Lim, Juan Colmenares, Mietek Bakowski, Hans Peter Nee

Keywords:

Bipolar Junction Transistor (BJT), Failure Analysis, Junction Field-Effect Transistor (JFET), Power MOSFET, Semiconductor Device Reliability, Short-Circuit Current, Silicon Carbide (SiC), Wide Bandgap Semiconductor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] D. P. Sadik, J. Colmenares, G. Tolstoy, D. Peftitsis, M. Bakowski, J. Rabkowski, and H. P. Nee, Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors, IEEE Transactions on Industrial Electronics, vol. 63, no. 4, pp.1995-2004, Apr. (2016).

DOI: 10.1109/tie.2015.2506628

Google Scholar

[2] R. Singh, B. Grummel, and S. Sundaresan, Short circuit robustness of 1200 V SiC switches, in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Nov. 2015, pp.1-4.

DOI: 10.1109/wipda.2015.7369309

Google Scholar

[3] SYNOPSYS, Taurus Medici User Guide Version L-2016. 03, (2016).

Google Scholar

[4] J. K. Lim, D. Peftitsis, J. Rabkowski, M. Bakowski, and H. P. Nee, Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs, IEEE Transactions on Power Electronics, vol. 29, no. 5, pp.2180-2191, May (2014).

DOI: 10.1109/tpel.2013.2281084

Google Scholar

[5] S. Murali and N. Srikanth, Acid Decapsulation of Epoxy Molded IC Packages With Copper Wire Bonds, IEEE Transactions on Electronics Packaging Manufacturing, vol. 29, no. 3, pp.179-183, Jul. (2006).

DOI: 10.1109/tepm.2006.882499

Google Scholar