Capacitances in 4H-SiC TSI-VJFETs

Maria Kayambaki; Konstantinos Vamvoukakis; Antonis Stavrinidis; George  Konstantinidis; Nikolaos Kornilios; Konstantinos Zekentes

doi:10.4028/www.scientific.net/MSF.897.591

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Capacitances in 4H-SiC TSI-VJFETs

Capacitances in 4H-SiC TSI-VJFETs

Abstract:

Internal device capacitances in 4H-SiC based devices play an important role in determining their performances. In the present work, an analysis of the capacitance measurements in 4H-SiC trenched and single-implanted (TSI) gate vertical JFET TSI-VJFETs has been undertaken. Physical parameters such as threshold voltage and the related to its value effective channel length as well as channel layer and drift layer doping profiles have been extracted. The measured internal capacitances have been modeled by various models based on device physics.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

591-594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.591

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Online since:

May 2017

Authors:

Maria Kayambaki, Konstantinos Vamvoukakis*, Antonis Stavrinidis, George Konstantinidis, Nikolaos Kornilios, Konstantinos Zekentes

Keywords:

Capacitance Characteristics, C-V Simulations, Scanning Electron Microscopy (SEM), Silicon Carbide (SiC), Threshold Voltage, TSI-VJFET

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