Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)

Pavel A. Ivanov; Valentin S. Yuferev; Mikhail E. Levinshtein; Qing Chun Zhang; John W. Palmour

doi:10.4028/www.scientific.net/MSF.897.563

Paper Titles

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
p.545

Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
p.549

Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
p.553

Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
p.557

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
p.563

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C
p.567

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation
p.571

Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
p.575

Total Dose Effects on 4H-SiC Bipolar Junction Transistors
p.579

HomeMaterials Science ForumMaterials Science Forum Vol. 897Collector Conductivity Modulation in 1200-V 4H-SiC...

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)

Abstract:

The resistance of the BJT collector layer can be sharply reduced by the effective injection of minority carriers (holes) from base to collector. As a result, the voltage drop across the BJT becomes substantially lower. The conditions under which this process can occur are the short rise time and the high amplitude of the base pulse.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

563-566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.563

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Online since:

May 2017

Authors:

Pavel A. Ivanov*, Valentin S. Yuferev, Mikhail E. Levinshtein, Qing Chun Zhang, John W. Palmour

Keywords:

Bipolar Junction Transistor (BJT), Collector Conductivity Modulation, Fast Switching, Power Device, Silicon Carbide (SiC)

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