Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

Mitsuo Okamoto; Mitsuru Sometani; Shinsuke Harada; Hiroshi Yano; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.897.549

Paper Titles

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
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Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
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Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode
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Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
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Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
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Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
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Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Dynamic Characterization of the Threshold Voltage...

Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

Abstract:

The threshold voltage (V_th) instability of 4H-SiC MOSFETs was investigated using high-speed IV measurement instrument. DC stress measurement of wide time span ranging from 10^-6 to 10³ s without relaxation effect was conducted. The high-speed measurement allowed of dynamic ΔV_th measurement under pulsed AC gate bias stress. We investigated effects of NO POA in gate oxidation process on the V_th instabilities.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

549-552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.549

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Online since:

May 2017

Authors:

Mitsuo Okamoto*, Mitsuru Sometani, Shinsuke Harada, Hiroshi Yano, Hajime Okumura

Keywords:

High-Speed Measurement, MOSFET, NO POA, Positive Bias Temperature Instability (PBTI), Pulsed AC Gate Bias Stress, V_th Shift

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