Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET

Cheng Tyng Yen; Hsiang Ting Hung; Chien Chung Hung; Lurng Shehng Lee; Chwan Ying Lee; Yao Feng Huang; Fu Jen Hsu; Tzong Liang Chen

doi:10.4028/www.scientific.net/MSF.897.533

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Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Negative Bias Temperature Instability on...

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET

Abstract:

The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% when the starting bias was-15V. The increase of subthreshold swing was caused by enhanced hole trapping which could be explained by the mechanism of positively charged interface states assisted hole trapping. The increase of subthreshold swing for MOSFET with improved gate oxide was reduced to about 40% when the starting bias was-20V and the value approached saturation for starting biases more negative than-10V, which can also be explained by the proposed mechanism. The increase of subthreshold swing for MOSFET with improved oxide was not sensitive to the temperature. The increase of subthreshold swing at 175°C was only 5%~7% higher than that at room temperature.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.533

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Online since:

May 2017

Authors:

Cheng Tyng Yen*, Hsiang Ting Hung, Chien Chung Hung, Lurng Shehng Lee, Chwan Ying Lee, Yao Feng Huang, Fu Jen Hsu, Tzong Liang Chen

Keywords:

Hole Trapping, NBTI, Positive Charge, Subthreshold Swing, Threshold Voltage Instability

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