Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

Sauvik Chowdhury; Collin W. Hitchcock; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.897.545

Paper Titles

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
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Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
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Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
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Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode
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Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
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Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
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Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs
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Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Comparative Evaluation of Commercial 1200 V SiC...

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

Abstract:

We present a comparative study of the electrical characteristics of different 1200V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As compared to conventional silicon power MOSFETs, SiC MOSFETs show very different operating characteristics at low temperatures which is due to unique material and design parameters used in SiC MOSFETs. Of particular interest is a non-linear mixed triode/pentode-like I-V characteristic exhibited by all SiC MOSFETs at 77 K, which is demonstrated to be due to short channel effects in the constituent JFET.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

545-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.545

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Online since:

May 2017

Authors:

Sauvik Chowdhury, Collin W. Hitchcock, T. Paul Chow*

Keywords:

Cryogenic, Power MOSFET, SiC MOSFET

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