Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode

Shintaroh Sato; Haruka Shimizu; Akio Shima; Yasuhiro Shimamoto

doi:10.4028/www.scientific.net/MSF.897.541

Paper Titles

Short-Circuit Robustness Testing of SiC MOSFETs
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Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
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Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes
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Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode
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Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
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Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Analysis Self-Healing of Gate Leakage Current due...

Analysis Self-Healing of Gate Leakage Current due to Oxide Traps to Improve Reliability of Gate Electrode

Abstract:

To achieve robust SiC-MOSFET, reliability of the gate insulator was investigated in terms of gate electrode edge treatment. Analytical calculation showed that r should be larger than the thickness of gate insulator to relax the electric field concentration. We obtained the rounded gate edge by dry oxidation at 1000°C, while oxidation at 800°C had it sharpened. Former samples exhibited low leakage current with Time-Zero-Dielectric-Breakdown (TZDB) measurement. I_g consisted of Fowler-Nordheim (FN) tunneling current for V_g > 0, and it includes excess components for V_g < 0. We confirmed that they occurred at the gate edge and that they coursed positively charged trap centers in oxide near poly-Si/SiO₂ interface which caused local barrier lowering. Electron injection removed them by tunneling/recombination process, which followed tunneling-front model.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

541-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.541

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Online since:

May 2017

Authors:

Shintaroh Sato*, Haruka Shimizu, Akio Shima, Yasuhiro Shimamoto

Keywords:

4H-SiC, Gate Leakage Current, SiC MOSFET

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