Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)

Woong Je Sung; B. Jayant Baliga

doi:10.4028/www.scientific.net/MSF.897.517

Paper Titles

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs
p.501

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions
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Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments
p.509

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
p.513

Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)
p.517

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
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Short-Circuit Robustness Testing of SiC MOSFETs
p.525

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices
p.529

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
p.533

HomeMaterials Science ForumMaterials Science Forum Vol. 897Design and Fabrication of 1400V 4H-SiC...

Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)

Abstract:

This paper presents design, fabrication, and electrical performance of 8A, 1400V 4H-SiC ACCUFETs. It is intended to provide detail discussions on channel design, edge termination technique, and electrical characteristics of high current, 1.2kV rated 4H-SiC ACCUFETs.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

517-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.517

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Online since:

May 2017

Authors:

Woong Je Sung*, B. Jayant Baliga

Keywords:

4H-SiC, ACCUFET, Accumulation Mode Channel, Edge Termination, MOSFET, Silicon Carbide (SiC)

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* - Corresponding Author

References

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