Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p+ Regions

Yu Saitoh; Takeyoshi Masuda; Hideto Tamaso; Hiroshi Notsu; Hisato Michikoshi; Kenji Hiratsuka; Shinsuke Harada; Yasuki Mikamura

doi:10.4028/www.scientific.net/MSF.897.505

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Switching Performance of V-Groove Trench Gate SiC...

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions

Abstract:

We developed V-groove trench gate SiC MOSFETs with grounded buried p⁺ regions. An effective reduction can be seen in the feedback capacitance (C_rss) of static characteristics, and a fast switching performance was achieved. The grounded buried p⁺ regions were found to be an effective structure for reducing a switching loss.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

505-508

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.505

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Online since:

May 2017

Authors:

Yu Saitoh*, Takeyoshi Masuda, Hideto Tamaso, Hiroshi Notsu, Hisato Michikoshi, Kenji Hiratsuka, Shinsuke Harada, Yasuki Mikamura

Keywords:

4H-SiC, MOSFET, Trench Gate

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* - Corresponding Author

References

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