A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

Ken Nakagomi; Shogo Okuyama; Hitoshi Habuka; Yoshinao Takahashi; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.897.383

Paper Titles

Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation
p.367

4H-SiC Trench Structure Fabrication with Al₂O₃ Etching Mask
p.371

Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
p.375

Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers
p.379

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas
p.383

Demonstrating the Instability of SiC Ohmic Contacts and Drain Terminal Metallization Schemes Aged at 300 °C
p.387

Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
p.391

Effect of Annealing on the Characteristics of Ti/Al Ohmic Contacts to p-Type 4H-SiC
p.395

Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
p.399

HomeMaterials Science ForumMaterials Science Forum Vol. 897A Method to Adjust Polycrystalline Silicon Carbide...

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

Abstract:

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.