4H-SiC Trench Structure Fabrication with Al2O3 Etching Mask

Article Preview

Abstract:

Trench structure etching is one of the most important processes for the fabrication of 4H-SiC Trench MOSFETs. This paper introduced Al2O3 as an etching mask for the fabrication of trench structures. The effect of dry etching parameters to the shape of trench structures were studied systematically. Micro trenches were successfully eliminated from trench structure etching process and preliminary trench MOSFET test structures were fabricated and characterized.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

371-374

Citation:

Online since:

May 2017

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] G. Liu et al., Enhanced inversion mobility on 4H-SiC (11-20) using phosphorus and nitrogen interface passivation, IEEE Electron Device Lett., vol. 34, no. 2, p.181–183, Feb. (2013).

DOI: 10.1109/led.2012.2233458

Google Scholar

[2] M. Lazar, H. Vang, P. Brosselard, C. Raynaud, P. Cremillieu, J. -L. Leclercq, A. Descamps, S. Scharnholz, D. Planson, Deep SiC etching with RIE, Superlattices and Microstructures vol. 40, pp.388-392, (2006).

DOI: 10.1016/j.spmi.2006.06.015

Google Scholar

[3] H. Oda, P. Wood, H. Ogiya, S. Miyoshi, O. Tsuji, Optimizing the SiC Plasma Etching Process For Manufacturing Power Devices, CS MANTECH Conference, May 18th - 21st, 2015, Scottsdale, Arizona, USA.

Google Scholar

[4] Myeong S. So, Seung-Gu Lim, Thomas N. Jackson, Journal of Vacuum Science & Technology B 17, 2055 (1999).

Google Scholar

[5] Yu Saitoh, Toru Hiyoshi, Keiji Wada, Takeyoshi Masuda, Takashi Tsuno, Yasuki Mikamura, SEI Technical review Number 80 April (2015).

Google Scholar