Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ

Li Li; Akihiro Ikeda; Tanemasa Asano

doi:10.4028/www.scientific.net/MSF.897.356

Paper Titles

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
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Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C
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Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
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Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion
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Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ
p.356

Study of Etching Processes for SiC Defect Analysis
p.363

Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation
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4H-SiC Trench Structure Fabrication with Al₂O₃ Etching Mask
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Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
p.375

HomeMaterials Science ForumMaterials Science Forum Vol. 897Enhanced Low-Temperature Oxidation of 4H-SiC Using...

Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ

Abstract:

SrTi_1-xMg_xO_3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to for a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.